Asus Preps H110M-E/M.2 Mainboard with M.2 Socket 3 Support

Asus decided to distinguish itself against the rivals by introducing a motherboard, based on Intel H110 chipset, which boasts a range of integrated facilities. One of such boons is the support for M.2 Socket 3 interface with a bandwidth index of 10 Gb/sec. However, when it operates in SATA mode, one out of four SATA 6 Gb/sec ports is disabled. If PCI-e drive is installed, there will be no restrictions.



Mainboard Asus H110M-E/M.2 supports all modern CPUs from Intel with Socket LGA1151. The PCB accommodates a pair of DIMM slots for the installation of 32 GB DDR4-2133 MHz memory. This micro-ATX board is equipped with a 4-phase Digi+ VRM as well as 5X Protection II protection technology.


The model houses a pair of PCI-e 2.0 x1 expansion slots & a single PCI-e 3.0 x16 slot. Storage subsystem is introduced by one M.2 slot and 4x SATA III ports. Audio subsystem is built on 8-channel Realtek ALC887 controller, whereas network facilities are backed by Realtek RTL8111H controller. …

High-End NAS Series TS-x69 from QNAP

QNAP, an outstanding supplier of network attached storages and NVR solutions, announces the release of a new high-end NAS series TS-x69. The series is represented by five models with two (TS-269 Pro), four (TS-469 Pro), five (TS-569 Pro), six (TS-669 Pro) and eight (TS-869 Pro) disk bays. All the models support hot drive swapping activity that does not require cessation of all operations when there is a need to change one of the drives. Under the company's idea, these NAS products are targeting small and middle business as a primary goal.



All five models are based on two-core Intel Atom D2700 processor, the nominal clock frequency of which achieves 2.13 GHz. TS-x69 models are equipped with DDR3 memory type of 1GB capacity; if there is a necessity, the user is able to enlarge the volume to 3GB. All storages support the integration of hard drives with the maximal 4TB capacity and high-speed SATA III 6 Gb/sec interface. Interface set is introduced by identical ports and outputs …

Welcome In New LPDDR4 Memory Chips from Samsung

Samsung settles down to a large-scale production of LPDDR4 mobile memory chips. Elaborated according to 20 nm technological norms, the new-comers boast the integration of an advanced technology that ensures 8 Gb crystal density and twice the performance compared with LPDDR3 chips. Currently, the company produces models of 2 GB and 3 GB capacity, however in early 2015 it will set to the development of 4 GB solutions.



New LPDDR4 memory modules are targeting various mobile devices with thirst for lightning-fast data transfer speed. The latter index might accelerate up to 3200 Mb/sec; this will allow employing chips for the implementation of resource-intensive tasks, such as recording and playback of high-resolution video or serial filming.


Samsung developers claim that 2 GB LPDDR4 DRAM is 40% more power-efficient than counterparts with 4 Gb crystal density. This became possible due to the adopting of low-voltage swing-terminated logic for I/O signaling. As a result, the …
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