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Samsung V-NAND SSD 850 Evo – A Weird Novelty Review
A few words about…
The first drives of the line with this name appeared in 2015. They were very similar to the 840 Evo, instead of planar crystals of 128 Gbps 32-layer 3D of the same capacity were used.
In the older model there is even the same tri-core MEX controller as in the 840 Evo, and the rest received dual-core, but improved MGX, working in combination with LPDDR2 memory with a frequency of 1066 MHz and a capacity of up to 1 GB. At the same time, the drive (like its predecessor) was positioned as a
competitor to mid-range devices - at that time, mainly using MLC memory. However, even those had only a three- and not a five-year guarantee, which became the visiting card of the Evo family. Including, and appeared a little later modification of 2 TB - which at that time was a very serious value, so it required the emergence of a special controller MHX (at the same time, and DRAM-cache in this model was transferred to a faster LPDDR3-memory).
At the end of the last year, the company updated the 850 Evo once again - because the production was already transferred to 64-layer memory: more economically profitable. There are no fundamental changes between the models. Some differences with regard to modifications could be looked for - in particular, devices with a capacity of 1 TB began to use 512 Gbit crystals, but 250 and 500 GB remains 256 Gbit to preserve the TTX. The guarantee, of course, remained a five-year term.
As a result, 850 Evo at the end of the life cycle is not the 850 Evo at the beginning. In 2015, these drives did not try to compete with the cheapest SSDs on the market, but in 2017 they already could.
Main Characteristics
Form Factor - 2.5 inch, mSATA, M.2
Capacity - 120 GB, 250 GB, 500 GB, 1 TB, 2 TB, 4 TB
Sequential Read Speed - Up to 540 MB/sec
Sequential Write Speed - Up to 520 MB/sec
However, it is possible to doubt in all positive moments. The transition to another memory doesn’t mean cosmetic changes, at least because the new 48-layer TLC 3D V-NAND has completely different characteristics. Firstly, a more subtle technical process is used, which certainly affects the resource. Secondly, its internal organization has also changed: TLC 3D V-NAND of the third generation has more capacious cores, which leads to the reduction of the parallelism. And these two factors show that the updated Samsung 850 EVO is a completely new model of SSD, which is close to its predecessor only with proprietary MGX controller.
What are the changes?
The main change in the second version of the Samsung 850 EVO is, of course, the transition to a third-generation TLC 3D V-NAND with a large number of layers, smaller cells and 256-gigabit cores.
The twofold increasing in the amount of cores used by TLC 3D V-NAND reduces the degree of parallelism in the memory array. One new kernel is 32 GB at once, so now you need half the number of NAND devices to get capacious SSD modifications. And this in some cases allows you to manage more simple controllers.
Earlier in the younger representatives of the 850 EVO series with a volume of up to 512 GB, a dual-core MGX processor was used, but it is capable of serving only up to 32 NAND devices. Therefore, at the heart of the terabyte drive there was a more powerful three-core MEX processor, which was borrowed from 850 PRO, and for the two-terabyte model, an even more advanced MHX chip was developed, capable of working with a flash memory array consisting of 128 NAND devices.
In the new, second version of the Samsung 850 EVO, the MGX controller is already used in modifications with a capacity of up to 1 TB. MEX chip is completely excluded from the series, and the most powerful MHX controller can be found now not only in the two-terabyte model. So, it was possible to develop the line further and to add to it one more modification with an unprecedented capacity of 4 terabytes.
Another change in the Samsung 850 EVO new version is the transfer of the DRAM buffer to a more modern type of memory. Previously, such a buffer, which is necessary for caching an address translation table, was based on LPDDR2 SDRAM. And only in the modification of SSD with the volume of 2 TB was used a higher-speed memory standard LPDDR3. Now all variants of Samsung 850 EVO with TLC 3D V-NAND of the third generation will be supplied with DRAM-buffer of type LPDDR3. The size of it remains old and familiar: for every gigabyte of storage capacity, there is 1 MB of buffer capacity.
As for the formal specifications, there are no fundamental changes in them. Performance characteristics of the second version of the Samsung 850 EVO fully coincide with the performance of the first version. This is quite natural, since the performance of this model is determined by the TurboWrite technology. The size and speed of the SLC cache running within this technology remained the same as before. The quarterly terabyte has a cache of 3 GB; a half-terabyte player - 6 GB, a terabyte - 12 GB and so on.
The first drives of the line with this name appeared in 2015. They were very similar to the 840 Evo, instead of planar crystals of 128 Gbps 32-layer 3D of the same capacity were used.
In the older model there is even the same tri-core MEX controller as in the 840 Evo, and the rest received dual-core, but improved MGX, working in combination with LPDDR2 memory with a frequency of 1066 MHz and a capacity of up to 1 GB. At the same time, the drive (like its predecessor) was positioned as a
competitor to mid-range devices - at that time, mainly using MLC memory. However, even those had only a three- and not a five-year guarantee, which became the visiting card of the Evo family. Including, and appeared a little later modification of 2 TB - which at that time was a very serious value, so it required the emergence of a special controller MHX (at the same time, and DRAM-cache in this model was transferred to a faster LPDDR3-memory).At the end of the last year, the company updated the 850 Evo once again - because the production was already transferred to 64-layer memory: more economically profitable. There are no fundamental changes between the models. Some differences with regard to modifications could be looked for - in particular, devices with a capacity of 1 TB began to use 512 Gbit crystals, but 250 and 500 GB remains 256 Gbit to preserve the TTX. The guarantee, of course, remained a five-year term.
As a result, 850 Evo at the end of the life cycle is not the 850 Evo at the beginning. In 2015, these drives did not try to compete with the cheapest SSDs on the market, but in 2017 they already could.
Main Characteristics
Form Factor - 2.5 inch, mSATA, M.2
Capacity - 120 GB, 250 GB, 500 GB, 1 TB, 2 TB, 4 TB
Sequential Read Speed - Up to 540 MB/sec
Sequential Write Speed - Up to 520 MB/sec
However, it is possible to doubt in all positive moments. The transition to another memory doesn’t mean cosmetic changes, at least because the new 48-layer TLC 3D V-NAND has completely different characteristics. Firstly, a more subtle technical process is used, which certainly affects the resource. Secondly, its internal organization has also changed: TLC 3D V-NAND of the third generation has more capacious cores, which leads to the reduction of the parallelism. And these two factors show that the updated Samsung 850 EVO is a completely new model of SSD, which is close to its predecessor only with proprietary MGX controller.
What are the changes?
The main change in the second version of the Samsung 850 EVO is, of course, the transition to a third-generation TLC 3D V-NAND with a large number of layers, smaller cells and 256-gigabit cores.
The twofold increasing in the amount of cores used by TLC 3D V-NAND reduces the degree of parallelism in the memory array. One new kernel is 32 GB at once, so now you need half the number of NAND devices to get capacious SSD modifications. And this in some cases allows you to manage more simple controllers.
Earlier in the younger representatives of the 850 EVO series with a volume of up to 512 GB, a dual-core MGX processor was used, but it is capable of serving only up to 32 NAND devices. Therefore, at the heart of the terabyte drive there was a more powerful three-core MEX processor, which was borrowed from 850 PRO, and for the two-terabyte model, an even more advanced MHX chip was developed, capable of working with a flash memory array consisting of 128 NAND devices.In the new, second version of the Samsung 850 EVO, the MGX controller is already used in modifications with a capacity of up to 1 TB. MEX chip is completely excluded from the series, and the most powerful MHX controller can be found now not only in the two-terabyte model. So, it was possible to develop the line further and to add to it one more modification with an unprecedented capacity of 4 terabytes.
Another change in the Samsung 850 EVO new version is the transfer of the DRAM buffer to a more modern type of memory. Previously, such a buffer, which is necessary for caching an address translation table, was based on LPDDR2 SDRAM. And only in the modification of SSD with the volume of 2 TB was used a higher-speed memory standard LPDDR3. Now all variants of Samsung 850 EVO with TLC 3D V-NAND of the third generation will be supplied with DRAM-buffer of type LPDDR3. The size of it remains old and familiar: for every gigabyte of storage capacity, there is 1 MB of buffer capacity.
As for the formal specifications, there are no fundamental changes in them. Performance characteristics of the second version of the Samsung 850 EVO fully coincide with the performance of the first version. This is quite natural, since the performance of this model is determined by the TurboWrite technology. The size and speed of the SLC cache running within this technology remained the same as before. The quarterly terabyte has a cache of 3 GB; a half-terabyte player - 6 GB, a terabyte - 12 GB and so on.
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