While prices for RAM memory rise, Chinese semiconductor makers are forced to intensify at producing their own DRAM chipsets. A short while ago the Xi’an UniIC Semiconductors company began to accept orders for certain DDR4 mem modules and microchips, which made this vendor the first Chinese chipset manufacturer, producing DRAM of this type in its home country.



Among its products Xi’an UniIC Semiconductors offers 4 GB and 8 GB DDR4 memory modules, performed in the DIMM and SO-DIMM form factors, as well as DIMM modules of 4 GB capacity, supporting ECC. All the devices are aimed at operation at the 1.2 V voltage in the DDR4-2133 mode, and feature CL15 delay time.

 

One ought to remember, though, these DDR4 modules are destined for internal market and currently it’s not clear if they will go further. Anyway, a new entrant at the DDR4 memory market should improve the situation with the RAM kits and modules retail pricing.

Following the success of Revolution X’t series of power supply units, Enermax has introduced the second generation of revolutionary solutions: the Revolution X’T II. The series counts four models of 160x150x86 mm dimensions, each complying with 80Plus Gold certificate (up to 92% efficiency level). All the new-comers are able to operate in a wide voltage range (100-240 V) to meet the requirements of different PC platforms.



Enermax Revolution X’t II units come equipped with a single +12V rail with high output capability, high-end Japanese electrolytic capacitors, DC-to-DC converters as well as other reliable hardware. The chassis is cooled down by 139-mm fan, based on patented Twister bearing; consequently, the fan is estimated for 160.000 hours of fail-safe activity.


In order to reduce the end price of the models, Enermax has implemented hybrid cabling: key cables are connected to the chassis, while accessory cables might be detached when unnecessary. The units …

ECS, a well-known designer of graphics solutions, announces the release of its new graphics card GeForce GTX 660 Ti, also known as GTX660TIA-2GR5-WFM. The card is elaborated on the basis of a reference adapter from Nvidia. GPU GK104 (designed according to 28 nm technological process) is the heart of the model. It consists of 1344 CUDA cores and features 915 MHz nominal frequency that can be dynamically overclocked to 980 MHz.



Memory subsystem of ECS GeForce GTX 660 Ti embraces 2 GB of GDDR5 memory that runs at the nominal 1502 MHz frequency but can be increased to the effective 6008 MHz mark. The manufacturer decided not to alter recommended by Nvidia parameters in their own version. The connection with GPU resources is realized via 192-bit rail.


This graphics card employs PCI-e 3.0 x16 internal interface. A set of external video interfaces totally corresponds to the etalon requirements and involves one DisplayPort, one HDMI, and a pair of DVI ports.


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