The new flagship GeForce GTX 1080 Ti pleased its users with the excellent performance results. But along with the performance of the new flagship, its heat emission increased as well. The reference versions are equipped with a turbine-type cooler, which decently deals with the nominal mode only. If one wants to get more from the GeForce GTX 1080 Ti, non-reference versions with powerful cooling are needed.


So, let’s consider suchlike card in this review: ROG STRIX GeForce GTX 1080 Ti 11GB OC offers improved PCB design and cooling with three fans which is more efficient and powerful than all the previous versions from ASUS. Such will definitely be cooler, quieter and of course more powerful than the Founders Edition.


Equipment and Outlook

ASUS is supplied in a large box with the traditional for the Strix series design. The delivery kit is minimal. In addition to the mandatory disk with software, Velcro ties for fixing cables inside the case are worth noting.


The …

While prices for RAM memory rise, Chinese semiconductor makers are forced to intensify at producing their own DRAM chipsets. A short while ago the Xi’an UniIC Semiconductors company began to accept orders for certain DDR4 mem modules and microchips, which made this vendor the first Chinese chipset manufacturer, producing DRAM of this type in its home country.



Among its products Xi’an UniIC Semiconductors offers 4 GB and 8 GB DDR4 memory modules, performed in the DIMM and SO-DIMM form factors, as well as DIMM modules of 4 GB capacity, supporting ECC. All the devices are aimed at operation at the 1.2 V voltage in the DDR4-2133 mode, and feature CL15 delay time.

 

One ought to remember, though, these DDR4 modules are destined for internal market and currently it’s not clear if they will go further. Anyway, a new entrant at the DDR4 memory market should improve the situation with the RAM kits and modules retail pricing.

The Samsung Electronics company has announced the beginning of high-volume DDR4 (Double-Data-Rate-4) DRAM memory chips output. These microchips are aimed at a wide range of next generation computing systems. They are the most productive and energy-efficient DRAM chips of the 8 Gb capacity.

 

It’s stated that the second gen (1y-nm) 10 nm technology is applied. While comparing it with the first generation methodology, one should note enhancement of key indicators. Thus, the running speed has increased by about 10 %, rate of information transfer is raised from 3,200 to 3,600 Mb/s. At the same time energy efficiency has grown by 15 %. Key specs improvement is achieved due to innovative technologies implementation (proprietary circuitry, for example).

 

It’s believed that such results will help Samsung accelerate the next generation (DDR5, HBM3, LPDDR5 and GDDR6 devices) memory chipsets market launch. The implementation area of these solutions …