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اسم السائق | AG315E4-D32 |
اسم الملف | 259750_VGA_SIS_6.13.10.2081_XPx86.zip |
بائع | SiS |
اكتب سائق | DISPLAY |
حجم | 16.3 Mb |
الإصدار | 5.13.01.2081 |
تاريخ سائق | 2002-05-15 |
نظام التشغيل | |
إيداع | 2017-04-07 |
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Samsung settles down to a large-scale production of LPDDR4 mobile memory chips. Elaborated according to 20 nm technological norms, the new-comers boast the integration of an advanced technology that ensures 8 Gb crystal density and twice the performance compared with LPDDR3 chips. Currently, the company produces models of 2 GB and 3 GB capacity, however in early 2015 it will set to the development of 4 GB solutions.
New LPDDR4 memory modules are targeting various mobile devices with thirst for lightning-fast data transfer speed. The latter index might accelerate up to 3200 Mb/sec; this will allow employing chips for the implementation of resource-intensive tasks, such as recording and playback of high-resolution video or serial filming.
Samsung developers claim that 2 GB LPDDR4 DRAM is 40% more power-efficient than counterparts with 4 Gb crystal density. This became possible due to the adopting of low-voltage swing-terminated logic for I/O signaling. As a result, the …