Samsung Reports High-Volume Output of Advanced DDR4 DRAM Chipsets

The Samsung Electronics company has announced the beginning of high-volume DDR4 (Double-Data-Rate-4) DRAM memory chips output. These microchips are aimed at a wide range of next generation computing systems. They are the most productive and energy-efficient DRAM chips of the 8 Gb capacity.
 
It’s stated that the second gen (1y-nm) 10 nm technology is applied. While comparing it with the first generation methodology, one should note enhancement of key indicators. Thus, the running speed has increased by about 10 %, rate of information transfer is raised from 3,200 to 3,600 Mb/s. At the same time energy efficiency has grown by 15 %. Key specs improvement is achieved due to innovative technologies implementation (proprietary circuitry, for example).
 
It’s believed that such results will help Samsung accelerate the next generation (DDR5, HBM3, LPDDR5 and GDDR6 devices) memory chipsets market launch. The implementation area of these solutions includes server hardware, high-performance systems, supercomputers, mobile devices as well as graphics accelerators.