The Samsung Electronics company has announced the beginning of high-volume DDR4 (Double-Data-Rate-4) DRAM memory chips output. These microchips are aimed at a wide range of next generation computing systems. They are the most productive and energy-efficient DRAM chips of the 8 Gb capacity.

 

It’s stated that the second gen (1y-nm) 10 nm technology is applied. While comparing it with the first generation methodology, one should note enhancement of key indicators. Thus, the running speed has increased by about 10 %, rate of information transfer is raised from 3,200 to 3,600 Mb/s. At the same time energy efficiency has grown by 15 %. Key specs improvement is achieved due to innovative technologies implementation (proprietary circuitry, for example).

 

It’s believed that such results will help Samsung accelerate the next generation (DDR5, HBM3, LPDDR5 and GDDR6 devices) memory chipsets market launch. The implementation area of these solutions …

SSDs got implanted into IT market long time ago but still manage to provide potential customers with innovative and efficient solutions. There is no wonder that SSD market is represented by a large number of products oriented as on enthusiasts so on average people with average needs. Silicon Power is among the companies that frequently gladdens its clients with ever newer models and advanced technologies. Its new Velox V60 series is ready to offer an unmatched performance and unprecedented durability, along with rather 'stinging' price. However, its specifications justify the high cost.



Delivery Kit


Silicon Power Velox V60 is delivered in a compact cardboard, the external cover of which is full of information about this model. The kit involves a set of necessary for usage components, such as accompanying documentation, user manual, 3.5-inch adapter, and a set of screws. The screws are a useful means for the installation of the SSD not only in a dedicated slot in laptop, …

Mushkin Enhanced is about to launch a new series of top-tier SSDs within the framework of Reactor series. The series, represented by three models of 256 GB, 512 GB and 1 TB capacity, is targeting up-to-date gaming and high-performance systems. The greenhorns are developed in 2.5-inch form-factor with 7 mm thickness only and SATA III 6 Gb/sec interface.



Mushkin Reactor drives take Silicon Motion SM2246EN controller in cooperation with MLC NAND flash-memory as the basis. Their utmost sequential data transfer speed equals to 560 Mb/sec and 460 Mb/sec on Read/Write operations respectively, while random data transfer speed achieves 74.000 IOPS and 76.000 IOPS correspondingly.


The triple is thought to operate 1.5 million hours without failures in rather tough conditions (in working environments with up to 70 degrees temperature). All models support TRIM instructions, DevSleep mode that prolongs standalone operation of a mobile device on battery power supply, and the newest …