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მძღოლი დასახელება | Intel(R) Xeon(R) E7 v2/Xeon(R) E5 v2/Core i7 Integrated Memory Controller 0 Channel 0 - 3 Thermal Control 3 - 0EF5 |
ფაილის სახელი | 467270_7730-win10-A00-5RY8F.CAB |
მწარმოებელი | INTEL |
მოწყობილობის ტიპი | SYSTEM |
ზომა | 726 Mb |
Driver ვერსია | 10.1.3.1 |
თარიღი მძღოლი | 1968-07-18 |
ოპერაციული სისტემა | |
ატვირთვის თარიღი | 2018-09-22 |
Or click to install driver manually | |
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![](/uploads/images/2017/12/21/thumb-110x-/Samsung%20Reports%20High-Volume%20Output%20of%20Advanced%20DDR4%20DRAM%20Chipsets.jpg)
It’s stated that the second gen (1y-nm) 10 nm technology is applied. While comparing it with the first generation methodology, one should note enhancement of key indicators. Thus, the running speed has increased by about 10 %, rate of information transfer is raised from 3,200 to 3,600 Mb/s. At the same time energy efficiency has grown by 15 %. Key specs improvement is achieved due to innovative technologies implementation (proprietary circuitry, for example).
It’s believed that such results will help Samsung accelerate the next generation (DDR5, HBM3, LPDDR5 and GDDR6 devices) memory chipsets market launch. The implementation area of these solutions …