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Driver navn | GW-USNano |
Fil | 331354_200000049_09878c58ba64440850d9e21f4250c396699b0029.cab |
Lag | Realtek Semiconductor Corp. |
Enhetstype | NET |
Størrelse | 1.09 Mb |
Driver versjon | 1086.49.0522.2012 |
Driver Date | 2012-05-22 |
Operativsystem | Windows 7 x64 |
Upload | 2017-10-14 |
Or click to install driver manually | |
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Samsung settles down to a large-scale production of LPDDR4 mobile memory chips. Elaborated according to 20 nm technological norms, the new-comers boast the integration of an advanced technology that ensures 8 Gb crystal density and twice the performance compared with LPDDR3 chips. Currently, the company produces models of 2 GB and 3 GB capacity, however in early 2015 it will set to the development of 4 GB solutions.
New LPDDR4 memory modules are targeting various mobile devices with thirst for lightning-fast data transfer speed. The latter index might accelerate up to 3200 Mb/sec; this will allow employing chips for the implementation of resource-intensive tasks, such as recording and playback of high-resolution video or serial filming.
Samsung developers claim that 2 GB LPDDR4 DRAM is 40% more power-efficient than counterparts with 4 Gb crystal density. This became possible due to the adopting of low-voltage swing-terminated logic for I/O signaling. As a result, the …