The Samsung Electronics company has announced the beginning of high-volume DDR4 (Double-Data-Rate-4) DRAM memory chips output. These microchips are aimed at a wide range of next generation computing systems. They are the most productive and energy-efficient DRAM chips of the 8 Gb capacity.

 

It’s stated that the second gen (1y-nm) 10 nm technology is applied. While comparing it with the first generation methodology, one should note enhancement of key indicators. Thus, the running speed has increased by about 10 %, rate of information transfer is raised from 3,200 to 3,600 Mb/s. At the same time energy efficiency has grown by 15 %. Key specs improvement is achieved due to innovative technologies implementation (proprietary circuitry, for example).

 

It’s believed that such results will help Samsung accelerate the next generation (DDR5, HBM3, LPDDR5 and GDDR6 devices) memory chipsets market launch. The implementation area of these solutions …

Four- and six-core models of Ryzen 5 Summit Ridge processors have already appeared on sale, and almost everything is known about the speed and overclocking potential of the eight-core models (R7). The new Ryzen series processors are actually system-on-a-chip (SOC). Integration of the memory controller, functions of which have been once performed by the north bridge, is not something surprising.


Much more interesting is the south bridge, responsible for working with the periphery. Now such processors have basic capabilities for connecting, for example, drives, and they also have several USB outputs. In other words, most of the functions of motherboards have now lost their habitual form.


The so-called «chipset» is a hub; it greatly extends the capabilities of the computer. In fact, those fixes that many users expect are in the plane of UEFI interaction with the CPU (SOC) itself and are unlikely to rest on the structural component of the board.


AMD X370 is the senior …

Plextor is currently preparing a new SSD series, codenamed M5P. According to the forecasts, this series will be differentiated by high-performance characteristics and Serial ATA 3.0 interface. M5P will be represented by three models of 128 GB, 256 GB and 512 GB volume capacities. All the model lines are developed with the utilization of 19 nm technological process. In addition, all SSDs will be equipped with NAND flash-memory (MLC Toshiba) and Marvell 88SS9187 controllers.



Three models differ from one another by the flash-memory volume. Thereby, 128 GB models accommodates 256 MB of DDR3 cache-memory, 256 GB model – 512 MB, and the last one, 512 GB model – 768 MB. Those SSDs support SATA 6 Gb/sec.


The manufacturer claim that the maximal consecutive reading and writing speeds will achieve 540 Mb/sec and 340 Mb/sec correspondingly (with 128 GB model); 256 GB and 512 GB models will achieve 540 Mb/sec in reading and 450 Mb/sec in writing mode. At the same time, M5P series …